Semiconductor apparatus

Details Semiconductor apparatus Semiconductor apparatus

1988-10-11

1990-07-10

Wojciechowicz, Edward J.

357 16, 357 55, 357 60, 357 68, 357 71, H01L 2712

Patent

active

049410245

ABSTRACT:
A semiconductor apparatus comprises a step-shaped substrate and a multiple-layered crystal structure formed on the substrate, said multiple-layered crystal structure is of a superlatticed layer which is composed of alternate layers consisting of plural thin layers grown by molecular beam epitaxy.

REFERENCES:
patent: 4591889 (1986-05-01), Gossard et al.
patent: 4599787 (1986-07-01), Sasatani
patent: 4644378 (1987-02-01), Williams
Appl. Phys. Lett., 44 (1984), pp. 325-327.
Appl. Phys. Lett., 43 (1983), pp. 345-347.
IEEE Electron Device Letters, EDL-3 (1982), pp. 305-307.

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