Method for improving patterning of a conductive layer in an inte

Details Method for improving patterning of a conductive layer in an inte Method for improving patterning of a conductive layer in an inte

1997-10-27

2000-03-14

Nelms, David

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438706, 438725, 438733, 438738, 438742, 438743, 438744, H01L 2131

Patent

active

060372761

ABSTRACT:
A method for improving the patterning process of a conductive layer using a dual-layer cap of oxynitride and silicon nitride. The oxynitride layer acts as a BARC (Bottom Anti-Reflective Coating) to improve photolithography process performance. The oxynitride is formed by plasma-enhanced chemical vapor deposition.

REFERENCES:
patent: 4971655 (1990-11-01), Stefano et al.
patent: 5639689 (1997-06-01), Woo
patent: 5767018 (1998-06-01), Bell
patent: 5773199 (1998-06-01), Linliu et al.
patent: 5837576 (1998-11-01), Chen et al.
patent: 5856225 (1999-01-01), Lee et al.
patent: 5920796 (1999-07-01), Wang et al.

Affiliated with

Also associated with

Rating

Method for improving patterning of a conductive layer in an inte does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for improving patterning of a conductive layer in an inte, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for improving patterning of a conductive layer in an inte will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-168974