Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-05-08
2000-03-14
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438660, 438688, 438637, 438627, 438648, 257762, 257765, 257766, 257771, H01L 214763, H01L 2144, H01L 2348
Patent
active
060372575
ABSTRACT:
Copper and a small amount of an alloying metal such as magnesium or aluminum are cosputtered onto a substrate having oxide on at least a portion of its surface. Either the wafer is held at an elevated temperature during deposition or the sputtered film is annealed without the wafer being exposed to ambient. Due to the high temperature, the alloying metal diffuses to the surface. If a surface is exposed to a low partial pressure of oxygen or contacts silicon dioxide, the magnesium or aluminum forms a thin stable oxide. The alloying metal oxide encapsulates the copper layer to provide a barrier against copper migration, to form an adhesion layer over silicon dioxide, and to act as a seed layer for the later growth of copper, for example, by electroplating.
REFERENCES:
patent: 5391517 (1995-02-01), Gelatos et al.
patent: 5654232 (1997-08-01), Gardner
patent: 5744394 (1998-04-01), Iguchi et al.
patent: 5747360 (1998-05-01), Nulman
patent: 5770519 (1998-06-01), Klein et al.
Gutman et la., "Integration of copper multilevel interconnects with oxide and polymer interlevel dielectrics," Thin Solid Films, vol. 270, No. 1/2, Dec. 1995, pp. 472-479.
Murarka et al., "Copper interconnection schemes: Elimination of the need of diffusion barrier/adhesion promoter by the use of corrosion resistant, low resistivity doped copper," Microelectronics Technology and Process Integration, Austin TX, USA, Oct. 20-21, 1994, Proceedings of the SPIE--The International Society for Optical Engineering, vol. 2335, 1994, pp. 80-90.
Murarka et al., "Copper metallization for ULSI and beyond," Critical Reviews in Solid State and Materials Science, vol. 10, No. 2, 1995, pp. 87-124.
Lanford et al., "Low-temperature passivation of copper by doping with Al or Mg," Thin Solid Films, vol. 262, 1995, pp. 234-241.
Chiang Tony
Chin Barry
Ding Peijun
Hashim Imran
Sun Bingxi
Applied Materials Inc.
Guenzer Charles S.
Nguyen Ha Tran
Niebling John F.
LandOfFree
Sputter deposition and annealing of copper alloy metallization does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Sputter deposition and annealing of copper alloy metallization, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sputter deposition and annealing of copper alloy metallization will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-168891