Method of forming capacitor for semiconductor device using N.sub

Details Method of forming capacitor for semiconductor device using N.sub Method of forming capacitor for semiconductor device using N.sub

1997-04-18

2000-03-14

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438239, 438253, 438287, 438396, H01L 2170

Patent

active

060372052

ABSTRACT:
A method of forming a capacitor for a semiconductor device includes the steps of forming a gate electrode on a semiconductor substrate, forming an impurity diffused region on portions of the semiconductor substrate at sides of the gate electrode, forming a storage node electrode layer contacting one side of the impurity diffused region, forming a thermal nitride film on the storage node electrode layer, forming a Ta.sub.2 O.sub.5 layer on the thermal nitride film, and annealing the Ta.sub.2 O.sub.5 layer using an N.sub.2 O gas.

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