Thermal chemical vapor deposition of silicon dioxide and in-situ

Details Thermal chemical vapor deposition of silicon dioxide and in-situ Thermal chemical vapor deposition of silicon dioxide and in-situ

1992-04-01

1994-10-11

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437235, H01L 2100, H01L 2102

Patent

active

053547152

ABSTRACT:
A high pressure, high throughout, single wafer semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. The reactor provides uniform processing over a wide range of pressures including very high pressures. A low temperature process for forming a highly conformal layer of silicon dioxide from a plasma of TEOS, oxygen and ozone is also disclosed. This layer can be planarized using an etchback process. Silicon oxide deposition and etchback can be carried out sequentially in the reactor.

REFERENCES:
patent: 3934060 (1976-01-01), Burt et al.
patent: 4002512 (1977-01-01), Lim
patent: 4872947 (1989-10-01), Wang et al.
Sze, VLSI Technology, McGraw.varies.Hill, 1983, pp. 94, 95, 106-108, 116.

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