Method of manufacturing capacitor included in semiconductor devi

Details Method of manufacturing capacitor included in semiconductor devi Method of manufacturing capacitor included in semiconductor devi

1996-07-12

2000-11-07

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438 3, 257295, 257310, H01L 218242, H01L 21108

Patent

active

06143597&

ABSTRACT:
A method of manufacturing a capacitor comprises a step of forming a first dielectric layer composed of a ferroelectric material or a dielectric material possessing high permittivity on a first electrode, a step of sintering the first dielectric layer, a step of forming a second dielectric layer on the first dielectric layer, and a step of forming a second electrode on the second dielectric layer. By forming the second dielectric layer having small crystal grain size on the first dielectric layer having large crystal grain size, the surface of the capacitor insulating layer becomes flat.

REFERENCES:
patent: 5572052 (1996-11-01), Kashihara et al.
patent: 5576564 (1996-11-01), Satoh et al.
patent: 5635741 (1997-06-01), Tsu et al.
patent: 5736759 (1998-04-01), Haushalter
patent: 5757061 (1998-05-01), Satoh et al.
patent: 5780886 (1998-07-01), Yamanobe

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