Method of fabricating capacitor utilizing an ion implantation me

Details Method of fabricating capacitor utilizing an ion implantation me Method of fabricating capacitor utilizing an ion implantation me

1998-02-17

2000-05-02

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438396, 438528, 438964, H01L 218242

Patent

active

060571896

ABSTRACT:
A method of fabricating a capacitor, comprising the steps of: providing a conductive layer over a semiconductor substrate having a transistor formed thereon to connect a source/drain region of the transistor; forming a hemispherical grained silicon layer over the conductive layer; using an implantation method to implant ions into the hemispherical grained silicon layer; performing a thermal treatment process to convert the ions into a barrier layer over the hemispherical grained silicon layer; performing a wet etching process to clean a surface of the barrier layer; forming a dielectric layer over the barrier layer and forming a top electrode over the dielectric layer.

REFERENCES:
patent: 5429972 (1995-07-01), Anjum et al.
patent: 5670406 (1997-09-01), Tseng

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