Method for manufacturing DRAM capacitor

Details Method for manufacturing DRAM capacitor Method for manufacturing DRAM capacitor

1998-04-14

2000-07-04

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438648, H01L 218242

Patent

active

060837896

ABSTRACT:
A method for forming a DRAM capacitor whose titanium nitride electrode is fabricated in a sequence of steps that results in a good step-coverage. Moreover, contamination of the titanium nitride layer and cross-diffusion between the titanium nitride layer and the dielectric film layer is reduced to a minimum. The method of forming the titanium nitride layer includes the steps of depositing a first titanium nitride layer over a dielectric film layer using a conventional physical vapor deposition process. Then, a second titanium nitride layer is deposited over the first titanium nitride layer using a collimated physical vapor deposition process.

REFERENCES:
patent: 5795805 (1998-08-01), Wu
patent: 5854106 (1998-12-01), Wu

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