Method of making static random access memory cell having a trenc

Details Method of making static random access memory cell having a trenc Method of making static random access memory cell having a trenc

1997-03-24

1999-03-09

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438430, 438454, H01L 218244

Patent

active

058799800

ABSTRACT:
A static random access memory (SRAM) cell having increased cell capacitance at the storage nodes utilizes a capacitive structure disposed in a trench. The capacitive structure includes an oxide liner disposed underneath a polysilicon or tungsten plug. The polysilicon plugs are each isolated from the drains of lateral transistors associated with the SRAM cell. The capacitive structure is provided between first and second N-channel pull down transistors associated with the SRAM cell. The polysilicon plug can be provided during the formation of local interconnects for the cell. The polysilicon material or plug can be coupled to the semiconductor substrate.

REFERENCES:
patent: 4987090 (1991-01-01), Hsu et al.
patent: 5252506 (1993-10-01), Carter et al.
patent: 5459686 (1995-10-01), Saito
patent: 5487044 (1996-01-01), Kawaguchi et al.
patent: 5489790 (1996-02-01), Lage

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