Semiconductor device manufacturing: process – Masking – Radiation resist
Patent
1997-09-05
1999-10-05
Utech, Benjamin
Semiconductor device manufacturing: process
Masking
Radiation resist
438585, 438717, 438736, 134 13, 430 5, H01L 21302
Patent
active
059638419
ABSTRACT:
A gate is formed on a semiconductor substrate by using a bottom anti-reflective coating (BARC) to better control the critical dimension (CD) of the gate as defined via a deep-UV resist mask formed thereon. The wafer stack includes a gate oxide layer over a semiconductor substrate, a polysilicon gate layer over the gate oxide layer, a SiON BARC over the conductive layer, a thin oxide film over the SiON BARC. The resist mask is formed on the oxide film. The SiON BARC improves the resist mask formation process. The wafer stack is then shaped to form one or more polysilicon gates by sequentially etching through selected portions of the oxide film, the BARC, and the gate conductive layer as defined by the etch windows in the resist mask. Once properly shaped, the remaining portions of the resist mask, oxide film and SiON BARC are removed.
REFERENCES:
patent: 4688069 (1987-08-01), Joy et al.
patent: 4869781 (1989-09-01), Even et al.
patent: 5431770 (1995-07-01), Lee et al.
patent: 5482894 (1996-01-01), Havemann
patent: 5545578 (1996-08-01), Park et al.
patent: 5567631 (1996-10-01), Hsu et al.
patent: 5580700 (1996-12-01), Rahman
patent: 5600165 (1997-02-01), Tsukamoto et al.
patent: 5605601 (1997-02-01), Kawasaki
patent: 5620912 (1997-04-01), Hwang et al.
patent: 5756401 (1998-05-01), Iizuka
patent: 5804088 (1998-09-01), McKee
"Optically Matched Trilevel Resist Process For Nanostructure Fabrication"; Schattenburg et al.; J. Voc. Sci. Tech., B (1995), 13(6), pp. 3007-3011, 1995.
"Submicron Optical Lithography Utilizing A Negative Deep UV Resist MRS"; Tomioka; Proc. SPIE--Int. Soc. Opt. Eng (1985), 539 (Adv. Resist Tech. Proc. 2); pp. 151-159.
Bell Scott A.
Foote David K.
Karlsson Olov B.
Lyons Christopher F.
Ngo Minh Van
Advanced Micro Devices , Inc.
Goudreau George
Utech Benjamin
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