Fluorine-doped silicate glass hard mask to improve metal line et

Details Fluorine-doped silicate glass hard mask to improve metal line et Fluorine-doped silicate glass hard mask to improve metal line et

1997-12-29

1999-10-05

Everhart, Caridad

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438743, 438945, 438636, H01L 21443

Patent

active

059623462

ABSTRACT:
A new method of etching metal lines using fluorine-doped silicate glass as a hard mask is described. Semiconductor device structures are provided in and on a semiconductor substrate. The semiconductor device structures are covered with an insulating layer. A metal layer is deposited overlying the insulating layer. A layer of fluorine-doped silicate glass is deposited overlying the metal layer wherein the fluorine-doped silicate glass layer acts as a hard mask. The hard mask is covered with a layer of photoresist. The photoresist layer is exposed to actinic light and developed and patterned to form the desired photoresist mask. The hard mask is etched away where it is not covered by the photoresist mask leaving a patterned hard mask. The metal layer not covered by the patterned hard mask is etched away to form metal lines whereby fluorine ions released from the patterned hard mask form a passivation layer on the sidewalls of the metal lines thereby preventing undercutting of the metal lines resulting in metal lines having a vertical profile. The photoresist mask is removed and fabrication of the integrated circuit is completed.

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