Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-06-29
2000-08-08
Whitehead, Jr., Carl
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438656, 438669, 438672, 438674, 438675, H01L 2144
Patent
active
061001872
ABSTRACT:
A barrier layer is formed on the contact plug of the semiconductor body. The barrier layer prevents oxidation of the contact plug. The barrier layer is produced by chemically reacting a prestructured metallic transition material with one or more reaction partners.
REFERENCES:
patent: 5212620 (1993-05-01), Evans, Jr. et al.
patent: 5506166 (1996-04-01), Sandhu et al.
Hintermaier Frank
Mazure-Espejo Carlos
Duong Khanh
Greenberg Laurence A.
Jr. Carl Whitehead
Lerner Herbert L.
Siemens Aktiengesellschaft
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