Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-12-19
1998-08-18
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257 67, 257336, 257344, 257408, 257410, 257411, 257412, 257413, 257640, 257649, H01L 2976, H01L 2994, H01L 3162, H01L 2358
Patent
active
057961514
ABSTRACT:
In an integrated circuit, gate electrode stack of which is subjected to self-alignment processes, the sheet resistance is lowered by including a tungsten layer 15. The tungsten layer 14 is protected by a sidewall material 21 of SiN.sub.x or SiO.sub.2 after an etching step which did not extend to the substrate 11. During a subsequent etching step in which the stack extends to the substrate 11, the sidewall material 31 acts as a hard mask protecting the upper portion of the stack. After the lower portion of the stack is protected by a re-oxidation layer 41, the entire stack can be processed further without deterioration of the sheet resistance of the tungsten layer 15.
REFERENCES:
patent: 4869781 (1989-09-01), Euen et al.
patent: 4954867 (1990-09-01), Hosaka
patent: 5034789 (1991-07-01), Ohsima
patent: 5097301 (1992-03-01), Sanchez
patent: 5258645 (1993-11-01), Sato
patent: 5311049 (1994-05-01), Tsuruta
patent: 5319229 (1994-06-01), Shimoji et al.
patent: 5319230 (1994-06-01), Nakao
patent: 5341016 (1994-08-01), Prall et al.
patent: 5473179 (1995-12-01), Hong
patent: 5600165 (1997-02-01), Tsukamoto et al.
patent: 5606192 (1997-02-01), Harada
patent: 5616948 (1997-04-01), Pfiester
patent: 5619051 (1997-04-01), Endo
Anderson Dirk N.
Hsu Wei-Yung
Kraft Robert
Brady III Wade James
Donaldson Richard L.
Holloway William W.
Saadat Mahshid D.
Soward Ida Marie
LandOfFree
Semiconductor stack having a dielectric sidewall for prevention does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor stack having a dielectric sidewall for prevention , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor stack having a dielectric sidewall for prevention will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1117022