Methods of fabricating field effect transistors including side b

Details Methods of fabricating field effect transistors including side b Methods of fabricating field effect transistors including side b

1998-06-09

2000-05-09

Elms, Richard T.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438305, 438306, H01L 21336

Patent

active

060603623

ABSTRACT:
A field effect transistor includes radially extending grooves in a microelectronic substrate. At least one of the radially extending grooves includes a side branch groove extending from it. A ring-shaped gate is included on the radially extending grooves. The ring-shaped gate defines inner and outer regions of the microelectronic substrate. Source and drain regions are included in the respective inner and outer regions of the microelectronic substrate. The side branch grooves may be used to decrease on-state resistance and increase drive current of the field effect transistor.

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