4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Bulk effect device
  6. Bulk effect switching in amorphous material

Yen Chuo

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Lateral phase change memory with spacer electrodes

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate

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Phase change memory cell and method of fabricating

Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate

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Phase change memory device and fabricating method therefor

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate

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Phase change memory device and fabricating method therefor

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate

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Phase change memory devices and methods for manufacturing...

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2186514

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