Lateral phase change memory with spacer electrodes

Details Lateral phase change memory with spacer electrodes Lateral phase change memory with spacer electrodes

2006-05-17

2009-12-01

Loke, Steven (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C438S102000

Reexamination Certificate

active

07626191

ABSTRACT:
A lateral phase change memory with spacer electrodes and method of manufacturing the same are provided. The memory is formed by connecting the conductive electrodes with lower resistivity and the spacer electrodes with higher resistivity, and filling the phase change material between the spacer electrodes. Therefore, the area that the phase change material contacts the spacer electrodes and the volume of the phase change material can be reduced; thereby the programming current and power consumption of the phase change memory are reduced.

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