Phase change memory cell and method of fabricating

Details Phase change memory cell and method of fabricating Phase change memory cell and method of fabricating

2006-07-27

2010-11-16

Dinh, Son T (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000, C365S100000, C257S002000, C257S060000, C257SE29080

Reexamination Certificate

active

07835177

ABSTRACT:
A phase change memory (PCM) cell fabricated by etching a tapered structure into a phase change layer, and planarizing a dielectric layer on the phase change layer until a tip of the tapered structure is exposed for contacting a heating electrode. Therefore, the area of the exposed tip of the phase change layer is controlled to be of an extremely small size, the contact area between the phase change layer and the heating electrode is reduced, thereby lowering the operation current.

REFERENCES:
patent: 6114713 (2000-09-01), Zahorik
patent: 6746892 (2004-06-01), Lee et al.
patent: 6800563 (2004-10-01), Xu
patent: 6867425 (2005-03-01), Wicker
patent: 2002/0006735 (2002-01-01), Zahorik
patent: 2005/0001284 (2005-01-01), Pellizzer

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