4. Single-crystal, oriented-crystal, and epitaxy growth processes;
  5. Processes of growth with a subsequent step acting on the...

Yasunori Mochizuki

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Fet having non-overlapping field control electrode between gate

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Field relief electrode
Patent

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Field effect transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate

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Method for growing p-type gallium nitride based compound semicon

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step acting on the...
Patent

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Profile ID: LFUS-PAI-P-429880

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