Method for growing p-type gallium nitride based compound semicon

Details Method for growing p-type gallium nitride based compound semicon Method for growing p-type gallium nitride based compound semicon

1997-01-17

1999-05-11

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step acting on the...

117 3, 117 89, 117 93, 117105, 117952, C30B1/02

Patent

active

059023937

ABSTRACT:
Disclosed is a method of growing 4 gallium nitride-based crystal by vapor phase epitaxy, suitable for mass production, without the necessity of thermal processing after completion of the crystal growth. The temperature of the substrate crystal immediately after completion of the crystal growth is 700.degree. C. or higher, and cooling of the substrate crystal at 700.degree. C. or lower after completion of the crystal growth is performed in an atmosphere of a hydrogen-fee carrier gas.

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"Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes" Nakamura et al 1994 American Institute of Physics; Appl. Phys. Lett. 64 (13); Mar. 28, 1994: pp. 1687-1689.
"Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers" Nakamura et al Japanese Journal of Applied Physics; vol. 30, No. 10A; Oct. 1991; pp. L 1708-L 1711.

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