4. Single-crystal, oriented-crystal, and epitaxy growth processes;
  5. Forming from vapor or gaseous state
  6. With decomposition of a precursor

Tokuya Kozaki

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Method of growing nitride semiconductors, nitride semiconductor

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent

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Nitride semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate

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Nitride semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate

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Nitride semiconductor device having a nitride semiconductor...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reissue Patent

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Nitride semiconductor device having a nitride semiconductor...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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