Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reissue Patent
2010-10-28
2011-10-04
Dickey, Thomas L (Department: 2826)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C257S078000
Reissue Patent
active
RE042770
ABSTRACT:
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.
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Chocho Kazuyuki
Iwasa Naruhito
Kiyoku Hiroyuki
Kozaki Tokuya
Nakamura Shuji
Dickey Thomas L
Nichia Corporation
Sughrue & Mion, PLLC
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