Nitride semiconductor device

Details Nitride semiconductor device Nitride semiconductor device

2005-01-04

2005-01-04

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S014000, C257S015000

Reexamination Certificate

active

06838693

ABSTRACT:
In the nitride semiconductor device of the present invention, an active layer12is sandwiched between a p-type nitride semiconductor layer11and an n-type nitride semiconductor layer13. The active layer12has, at least, a barrier layer2ahaving an n-type impurity; a well layer1amade of a nitride semiconductor that includes In; and a barrier layer2cthat has a p-type impurity, or that has been grown without being doped. An appropriate injection of carriers into the active layer12becomes possible by arranging the barrier layer2cnearest to the p-type layer side.

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