Nitride semiconductor device

Details Nitride semiconductor device Nitride semiconductor device

2006-10-10

2006-10-10

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S012000

Reexamination Certificate

active

07119378

ABSTRACT:
A nitride semiconductor device includes an n-type semiconductor layer, p-type semiconductor layer and an active layer of a quantum well structure that is sandwiched between said p-type and n-type nitride semiconductor layer, wherein the active layer has a first barrier layer, a second barrier layer and a third barrier layer. The first barrier layer is nearest to the p-type nitride semiconductor layer among the first, second and third barrier layers. The second barrier layer is nearest to the n-type nitride semiconductor layer among the first, second and third barrier layers. The third barrier layer is between the first and second barrier layers, and includes an upper barrier layer that contacts with a p-side surface of the well layer and a lower barrier layer that contacts with an n-side surface of said well layer. The upper and lower barrier layers having different composition or impurity concentrations.

REFERENCES:
patent: 5578839 (1996-11-01), Nakamura et al.
patent: 5684309 (1997-11-01), McIntosh et al.
patent: 5777350 (1998-07-01), Nakamura et al.
patent: 5780876 (1998-07-01), Hata
patent: 5786603 (1998-07-01), Rennie et al.
patent: 5786606 (1998-07-01), Nishio et al.
patent: 5793061 (1998-08-01), Ohuchi et al.
patent: 5841802 (1998-11-01), Whiteley et al.
patent: 5945689 (1999-08-01), Koike et al.
patent: 5959307 (1999-09-01), Nakamura et al.
patent: 5990496 (1999-11-01), Kunisato et al.
patent: 6040588 (2000-03-01), Koide et al.
patent: 6153894 (2000-11-01), Udagawa
patent: 6162656 (2000-12-01), Kunisato et al.
patent: 6172382 (2001-01-01), Nagahama et al.
patent: 6242761 (2001-06-01), Fujimoto et al.
patent: 6252894 (2001-06-01), Sasanuma et al.
patent: 6320893 (2001-11-01), Ueki
patent: 6326236 (2001-12-01), Koide et al.
patent: 6420733 (2002-07-01), Koide et al.
patent: 6423984 (2002-07-01), Kato et al.
patent: 6441393 (2002-08-01), Goetz et al.
patent: 6541293 (2003-04-01), Koide et al.
patent: 6586762 (2003-07-01), Kozaki
patent: 6821800 (2004-11-01), Koide et al.
patent: 6853009 (2005-02-01), Kato et al.
patent: 2001/0048112 (2001-12-01), Kato et al.
patent: 2002/0014632 (2002-02-01), Kaneyama et al.
patent: 2002/0146854 (2002-10-01), Koide et al.
patent: 2002/0149024 (2002-10-01), Kato et al.
patent: 2003/0124789 (2003-07-01), Koide et al.
patent: 2004/0026705 (2004-02-01), Kato et al.
patent: 0 716 457 (1996-06-01), None
patent: 762516 (1997-03-01), None
patent: 803916 (1997-10-01), None
patent: 1041650 (2000-10-01), None
patent: 1122841 (2001-08-01), None
patent: 1168539 (2002-01-01), None
patent: 2323210 (1998-09-01), None
patent: 63-152194 (1988-06-01), None
patent: 63-211784 (1988-09-01), None
patent: 02-228087 (1990-09-01), None
patent: 03-166785 (1991-07-01), None
patent: 5-206513 (1993-08-01), None
patent: 06-021511 (1994-01-01), None
patent: 06-164055 (1994-06-01), None
patent: 06-268257 (1994-09-01), None
patent: 07-147454 (1995-06-01), None
patent: 8-111558 (1996-04-01), None
patent: 08-125281 (1996-05-01), None
patent: 08-181386 (1996-07-01), None
patent: 8-293643 (1996-11-01), None
patent: 08-293643 (1996-11-01), None
patent: 08-316528 (1996-11-01), None
patent: 8293623 (1996-11-01), None
patent: 09-008412 (1997-01-01), None
patent: 9-36423 (1997-02-01), None
patent: 09-036423 (1997-02-01), None
patent: 09-036430 (1997-02-01), None
patent: 9-129926 (1997-05-01), None
patent: 9-266326 (1997-07-01), None
patent: 9-293935 (1997-11-01), None
patent: 10-4210 (1998-01-01), None
patent: 10-012922 (1998-01-01), None
patent: 10-012923 (1998-01-01), None
patent: 10-12969 (1998-01-01), None
patent: 10012922 (1998-01-01), None
patent: 10-135514 (1998-05-01), None
patent: 10-163523 (1998-06-01), None
patent: 10-242565 (1998-09-01), None
patent: 10-256601 (1998-09-01), None
patent: 11-054847 (1999-02-01), None
patent: 11-274644 (1999-10-01), None
patent: 11-298090 (1999-10-01), None
patent: 11298090 (1999-10-01), None
patent: 11-340559 (1999-12-01), None
patent: 11340559 (1999-12-01), None
patent: 2000-91629 (2000-03-01), None
patent: 2000-91630 (2000-03-01), None
patent: 2000-91631 (2000-03-01), None
patent: 2000091630 (2000-03-01), None
patent: 2000-156544 (2000-06-01), None
patent: 2000-208875 (2000-07-01), None
patent: 2000-286447 (2000-10-01), None
patent: 2000-349377 (2000-12-01), None
patent: 2000-349398 (2000-12-01), None
patent: 2001-44570 (2001-02-01), None
patent: 2001-077413 (2001-03-01), None
patent: 2001044570 (2001-12-01), None
patent: WO00/17972 (2000-03-01), None
patent: WO00/52796 (2000-09-01), None
patent: WO 00/76004 (2000-12-01), None
Salvador et al, “Properties of a Si doped GaN/AlGaN . . . ”, Appl. Phys Lett., vol. 67, No. 22, Nov. 1995, pp. 3322-3324.
Gotoh et al, “Imprevement of quantum efficiency by InGaN . . . ”, Extended Abstracts (The 48thspring Meeting 2001); The Japan Society of Applied Physics and Related Societies, No. 1(Jan. 28, 2003), 28p-E-12, pp. 369 and its English Abstract.
Office Action and Partial Translation filed in corresponding Japanese Application No. 2001-174903.
Search Report cited in corresponding PCT/JP01/05869.
Nakamura, S., “GaN-Based Blue/Green Semiconductor Laser,” IEEE Journal of Selected Topics in Quantum Electronics, IEEE Service Center, US, vol. 3, No. 2, Apr. 1997, pp. 435-442.
Supplementary European Search Report (Nov. 8, 2005).

Affiliated with

Also associated with

Rating

Nitride semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nitride semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nitride semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3616090