4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Bulk effect device
  6. Bulk effect switching in amorphous material

Thomas Gille

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Phase-change memory cell having two insulated regions

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate

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Phase-change memory cell with a patterned layer

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate

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Vertical phase change memory cell and methods for...

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2328156

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