Phase-change memory cell with a patterned layer

Details Phase-change memory cell with a patterned layer Phase-change memory cell with a patterned layer

2011-03-01

2011-03-01

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257SE47001, C257SE45002, C365S163000

Reexamination Certificate

active

07897952

ABSTRACT:
A phase-change-material memory cell is provided. The cell comprises at least one patterned layer of a phase-change material, and is characterized in that this patterned layer comprises at least two regions having different resistivities. If the resistivity of the phase-change material is higher in a well-defined area with limited dimensions (“hot spot”) than outside this area, then, for a given current flow between the electrodes, advantageously more Joule heat will be generated within this area compared to the area of the phase-change material where the resistivity is lower.

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patent: 7061013 (2006-06-01), Hideki
patent: 7387938 (2008-06-01), Hideki
patent: 7750431 (2010-07-01), Hideki
patent: 2004/0164290 (2004-08-01), Yi et al.
patent: 2005/0167645 (2005-08-01), Kim et al.
patent: 2007/0072125 (2007-03-01), Sousa et al.
patent: 2861887 (2005-05-01), None

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