Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2006-12-12
2010-06-01
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S004000, C257S005000, C257S750000, C257SE21021, C438S095000, C438S637000, C365S148000
Reexamination Certificate
active
07728319
ABSTRACT:
The present invention discloses a vertical phase-change-memory (PCM) cell, comprising a stack of a bottom electrode (5) contacting a first layer of phase change material (14), a dielectric layer (12) having an opening (13), a second layer of phase change material (6) in contact with the first layer of phase change material through the opening in the dielectric layer and a top electrode (7) contacting this second layer of phase change material.
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Gille Thomas
Goux Ludovic Raymond Andre
Lisoni Reyes Judit Gloria
Wouters Dirk Johan Cecil Christiaan Marie
NXP B.V.
Pert Evan
Wilson Scott R
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