Phase-change memory cell having two insulated regions

Details Phase-change memory cell having two insulated regions Phase-change memory cell having two insulated regions

2011-08-30

2011-08-30

Nguyen, Ha Tran T (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S004000, C257SE31029, C438S095000, C438S102000, C438S103000

Reexamination Certificate

active

08008644

ABSTRACT:
A phase-change-memory cell is provided which comprises two insulated regions formed in a first phase-change material connected by a region formed in a second phase-change material. The crystallization temperature of the second phase-change material is below the crystallization temperature of the first phase-change material. By locally changing the material properties using a second PCM material, which switches phase at a lower temperature, a localized “hot spot” is obtained.

REFERENCES:
patent: 7897952 (2011-03-01), Wouters et al.
patent: 2003/0155589 (2003-08-01), Campbell et al.

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