4. Single-crystal, oriented-crystal, and epitaxy growth processes;
  5. Forming from vapor or gaseous state
  6. With decomposition of a precursor

Stefan Zollner

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Anneal of epitaxial layer in a semiconductor device

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
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Efficient body contact field effect transistor with reduced...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
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Method of making a semiconductor device with embedded stressor

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
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