Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2008-10-01
2010-10-26
Pham, Thanh V. (Department: 2894)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S151000, C438S478000, C438S517000
Reexamination Certificate
active
07820530
ABSTRACT:
A method for forming a body contacted SOI transistor includes forming a semiconductor layer (103) having a body contact region (120), a body access region (121), and an active region (122). An SOI transistor is formed in the active region by etching a metal gate structure (107, 108) to have a first portion (130) formed over the active region, and a second portion (131) formed over at least part of the body access region. By implanting ions (203, 301) at a non-perpendicular angle into an implant region (204, 302) in the body access region so as to encroach toward the active region and/or under the second portion of the etched metal gate structure, silicide (306) may be subsequently formed over the body contact region and the implant region, thereby reducing formation of a depletion region (308) in the body access region.
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Liang Qingqing
Min Byoung W.
Zollner Stefan
Cannatti Michael Rocco
Fernandes Errol
Freescale Semiconductor Inc.
Hamilton & Terrile LLP
Pham Thanh V.
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