Method of making a semiconductor device with embedded stressor

Details Method of making a semiconductor device with embedded stressor Method of making a semiconductor device with embedded stressor

2007-05-31

2010-06-15

Cao, Phat X (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S154000, C257SE21630

Reexamination Certificate

active

07736957

ABSTRACT:
A method for forming a semiconductor device includes providing a semiconductor substrate; forming a gate dielectric over the semiconductor substrate; forming a gate electrode over the gate dielectric; forming an insulating layer over a sidewall of the gate electrode; defining source and drain regions in the semiconductor substrate adjacent to the insulating layer; implanting a dopant in the source and drain regions of the semiconductor substrate to form doped source and drain regions; forming a sidewall spacer adjacent to the insulating layer; forming a recess in the semiconductor substrate in the source and drain regions, wherein the recess extends directly underneath the spacer a predetermined distance from a channel regions; and forming a stressor material in the recess. The method allows the stressor material to be formed closer to a channel region, thus improving carrier mobility in the channel while not degrading short channel effects.

REFERENCES:
patent: 2004/0262694 (2004-12-01), Chidambaram
patent: 2006/0228842 (2006-10-01), Zhang et al.
patent: 2007/0012913 (2007-01-01), Ohta et al.
patent: 2008/0173941 (2008-07-01), Zhu et al.

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