4. Semiconductor device manufacturing: process
  5. Formation of semiconductive active region on any substrate
  6. Fluid growth from gaseous state combined with subsequent...

Stacia Keller

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Fabrication of nonpolar indium gallium nitride thin films,...

Metal treatment – Barrier layer stock material – p-n type
Reexamination Certificate

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Group-III nitride based high electron mobility transistor...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Having graded composition
Reexamination Certificate

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High light extraction efficiency light emitting diode (LED)...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate

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High quality, semi-insulating gallium nitride and method and...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth step with preceding and subsequent diverse...
Reexamination Certificate

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Method for the growth of P-type gallium nitride and its alloys

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with subsequent...
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Profile ID: LFUS-PAI-P-1423265

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