Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with subsequent...
Patent
1997-06-17
1999-04-06
Bowers, Charles
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with subsequent...
438507, 438509, H01L 3300
Patent
active
058917900
ABSTRACT:
Growth of doped gallium nitride, especially p-type gallium nitride, without using post-growth processing is achieved by eliminating hydrogen containing molecules from the growth process before cooling down the substrate. Rapid cooling of the substrate with nitrogen gas prevents the reaction of p-type dopant atoms with hydrogen, and the use of the nitrogen gas also keeps the nitrogen intact within the crystalline structure.
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C.J. eiting, et al., Growth of Low Resistivity P-Type GaN by Metal Organic Chemical Vapour Deposition, Electronics Letters, vol. 33, No. 23, pp. 1987-1989, Nov. 6, 1997.
Lisa Suigiura, et al., P-Type Conduction in As-Grown Mg-Doped GaN Grown by Metalorganic Chemical Vapor Deposition, Applied Physics Letter, vol. 72, No. 14, pp. 1748-1750, Apr. 6, 1998.
DenBaars Steven P.
Keller Stacia
Kozodoy Peter
Mishra Umesh K.
Bowers Charles
Christianson Keith
The Regents of the University of California
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