Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2011-07-12
2011-07-12
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S079000, C257SE21001, C257SE33068
Reexamination Certificate
active
07977694
ABSTRACT:
Light Emitting Diodes (LEDs) where the emission region, usually a (Al,In,Ga)N layer, is structured for efficient light extraction, are disclosed. The structuring is designed for light extraction from thin films, such as a photonic crystal acting as a diffraction grating. In addition, the structuring controls the in-plane emission and allows new modes into which light will be emitted. Various electrode designs are proposed, including ZnO structures which are known to lead to both excellent electrical properties, such as good carrier injection, and high transparency. Alternatively, the (Al,In,Ga)N layer can be replaced by structures with other materials compositions, in order to achieve efficient light extraction.
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David Aurelien J. F.
DenBaars Steven P.
Keller Stacia
Weisbuch Claude C. A.
Gates & Cooper LLP
Lam Cathy N
Nguyen Cuong Q
The Regents of the University of California
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