Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient
Reexamination Certificate
2009-12-07
2011-10-04
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
With specified impurity concentration gradient
C257SE45002
Reexamination Certificate
active
08030740
ABSTRACT:
A microelectronic structure including a layerstack is provided, the layerstack including: (a) a first layer including semiconductor material that is very heavily n-doped before being annealed, having a first-layer before-anneal dopant concentration, the first layer being between about 50 and 200 angstroms thick, wherein the first layer is above a substrate, and wherein the first layer is heavily n-doped after being annealed, having a first-layer after-anneal dopant concentration, the first-layer before-anneal dopant concentration exceeding the first-layer after-anneal concentration; (b) a second layer including semiconductor material that is not heavily doped before being annealed, having a second-layer before-anneal dopant concentration, the second layer being about as thick as the first layer, wherein the second layer is above and in contact with the first layer, and wherein the second layer includes heavily n-doped semiconductor material after being annealed, having a second-layer after-anneal dopant concentration, the second-layer after-anneal dopant concentration exceeding the second-layer before-anneal concentration; and (c) a third layer including semiconductor material that is above and in contact with the second layer and that is not heavily n-doped before or after being annealed, the third layer having a third-layer dopant concentration.
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Dugan & Dugan PC
Prenty Mark
SanDisk 3D LLC
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