Bottom-gate sonos-type cell having a silicide gate

Details Bottom-gate sonos-type cell having a silicide gate Bottom-gate sonos-type cell having a silicide gate

2007-10-31

2010-11-23

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S257000, C257SE21179, C257SE21561

Reexamination Certificate

active

07838350

ABSTRACT:
A bottom-gate thin film transistor having a silicide gate is described. This transistor is advantageously formed as SONOS-type nonvolatile memory cell, and methods are described to efficiently and robustly form a monolithic three dimensional memory array of such cells. The fabrication methods described avoid photolithography over topography and difficult stack etches of prior art monolithic three dimensional memory arrays of charge storage devices. The use of a silicide gate rather than a polysilicon gate allows increased capacitance across the gate oxide.

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