Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2009-08-13
2010-12-28
Menz, Laura M (Department: 2813)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C438S483000, C438S503000
Reexamination Certificate
active
07858502
ABSTRACT:
A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.
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Fujita Shunsuke
Hirota Ryu
Ijiri Hideyuki
Kasai Hitoshi
Matsumoto Naoki
McDermott Will & Emery LLP
Menz Laura M
Sumitomo Electric Industries Ltd.
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