4. Static information storage and retrieval
  5. Systems using particular element
  6. Resistive

Roy Lambertson

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Antifuse incorporating tantalum nitride barrier layer

Semiconductor device manufacturing: process – Direct application of electrical current – To alter conductivity of fuse or antifuse element
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Antifuse incorporating tantalum nitride barrier layer

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – active junction...
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Ion barrier cap

Static information storage and retrieval – Systems using particular element – Resistive
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Non-volatile memory device ion barrier

Static information storage and retrieval – Systems using particular element – Resistive
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Threshold device for a memory array

Static information storage and retrieval – Systems using particular element – Resistive
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Profile ID: LFUS-PAI-P-2342837

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