Non-volatile memory device ion barrier

Details Non-volatile memory device ion barrier Non-volatile memory device ion barrier

2009-12-18

2011-10-25

Tran, Michael (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S171000

Reexamination Certificate

active

08045364

ABSTRACT:
An ion barrier layer made from a dielectric material in contact with an electronically insulating layer is operative to prevent mobile ions transported into the electronically insulating layer from passing through the ion barrier layer and into adjacent layers during data operations on a non-volatile memory cell. A conductive oxide layer in contact with the electronically insulating layer is the source of the mobile ions. A programming data operation is operative to transport a portion of the mobile ions into the electronically insulating layer and an erase data operation is operative to transport the mobile ions back into the conductive oxide layer. When the portion is positioned in the electronically insulating layer the memory cell stores data as a programmed conductivity profile and when a substantial majority of the mobile ions are positioned in the conductive oxide layer the memory cell stores data as an erased conductivity profile.

REFERENCES:
patent: 6034882 (2000-03-01), Johnson et al.
patent: 6518156 (2003-02-01), Chen et al.
patent: 6849891 (2005-02-01), Hsu et al.
patent: 6903361 (2005-06-01), Gilton
patent: 6930909 (2005-08-01), Moore et al.
patent: 6940113 (2005-09-01), Hsu et al.
patent: 6965137 (2005-11-01), Kinney et al.
patent: 6972238 (2005-12-01), Hsu et al.
patent: 7060586 (2006-06-01), Li et al.
patent: 7148533 (2006-12-01), Hsu et al.
patent: 7218984 (2007-05-01), Bayat et al.
patent: 7256429 (2007-08-01), Hsu et al.
patent: 7417271 (2008-08-01), Genrikh et al.
patent: 7446010 (2008-11-01), Li et al.
patent: 7459716 (2008-12-01), Toda et al.
patent: 7460385 (2008-12-01), Gruber et al.
patent: 7462857 (2008-12-01), Arai et al.
patent: 7501318 (2009-03-01), Bedell et al.
patent: 7558099 (2009-07-01), Morimoto
patent: 7569459 (2009-08-01), Karg et al.
patent: 7577022 (2009-08-01), Muraoka et al.
patent: 7606086 (2009-10-01), Inoue
patent: 7633108 (2009-12-01), Li et al.
patent: 2003/0151959 (2003-08-01), Tringali et al.
patent: 2004/0014246 (2004-01-01), Lee
patent: 2004/0021201 (2004-02-01), Ballantine et al.
patent: 2007/0069217 (2007-03-01), Herner
patent: 2007/0105390 (2007-05-01), Oh
patent: 2007/0176264 (2007-08-01), Lee et al.
patent: 2008/0173975 (2008-07-01), Chen et al.
patent: 2009/0026441 (2009-01-01), Cheung et al.
patent: 2009/0026442 (2009-01-01), Cheung et al.
patent: 2009/0027976 (2009-01-01), Brewer et al.
patent: 2009/0225582 (2009-09-01), Schloss
U.S. Appl. No. 12/454,322, filed May 15, 2009, Rinnerson et al.
U.S. Appl. No. 12/653,851, filed Dec. 18, 2009, Rinnerson et al.
U.S. Appl. No. 12/653,836, filed Dec. 18, 2009, Schloss et al.
U.S. Appl. No. 12/653,854, filed Dec. 18, 2009, Bornstein.
U.S. Appl. No. 12/653,835, filed Dec. 18, 2009, Meyer.

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