Randall E. Lehmann

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Common-gate GaAs FET design for monolithic microwave integrated

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Dual-gate, field-effect transistor low noise amplifier

Amplifiers – With semiconductor amplifying device – Including field effect transistor
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Matched variable attenuation switched limiter

Wave transmission lines and networks – Automatically controlled systems – Impedance matching
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Monolithic low noise common-gate amplifier

Amplifiers – With semiconductor amplifying device – Including field effect transistor
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Monolithic p-i-n diode limiter

Wave transmission lines and networks – Automatically controlled systems – With control of equalizer and/or delay network
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Profile ID: LFUS-PAI-P-253782

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