Monolithic low noise common-gate amplifier

Details Monolithic low noise common-gate amplifier Monolithic low noise common-gate amplifier

1982-07-06

1985-06-25

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330286, 330296, 330311, 330307, H03F 360

Patent

active

045256780

ABSTRACT:
A monolithic amplifier having a common-gate input stage with a device transconductance which is higher than required for input match, and a load impedance presented to the common-gate stage which is not conjugate matched. The present invention teaches a common-gate configuration using an FET with higher transconductance and a higher output load impedance. Over narrower bandwidths, excellent input match is thus obtained with noise figures at least as good as those obtained with the common-source approach. This combination of noise figure and input match is achieved in a compact monolithic structure.

REFERENCES:
patent: 4390851 (1983-06-01), Higgins et al.
Petersen et al., "A Monolithic GaAs 0.1 to 10 GHz Amplifier", Conference: 1981 IEEE.
MIT Symposium Proceedings, International Microwave Symposium Digest, Jun. 16-19, 1981, R. S. Pengelly et al., "A Comparison Between Actively and Passively Matched S-Band GaAs Monolithic FET Amplifiers", pp. 367-369, p. 368; FIG. 5, Los Angeles, CA.

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