Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1985-09-06
1987-04-14
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330286, 330307, 330311, H03F 3193
Patent
active
046582207
ABSTRACT:
A monolithic low noise variable gain amplifier with series feedback includes a dual gate field effect transistor (DGFET) having a common source FET and a common gate FET with scaled gate widths and/or an interelectrode matching element connected to ground through a capacitor positioned between the two gates for reducing the minimum noise figure of the common gate FET and establishing the output load for the common source FET, and an inductive series feedback line for connecting the common source FET to ground. The amount of series feedback between the source and ground of the DGFET as well as the appropriate output load obtained through gate width scaling are selected to make the conjugate input impedance equal to the optimum impedance for a simultaneous noise match and power match.
REFERENCES:
Asai et al., "The Dual-Gate FET with Low Noise and Wide Dynamic Range, IEEE Int. Electron Devices Conf., Digest Tech. Papers (1973), pp. 64-67.
Engberg, "Simultaneous Input Power Match and Noise Optimization Using Feedback," Digests of Technical Papers, Fourth European Microwave Conference, Sep. 1974, pp. 385-389.
Liechti, "Performance of Dual-Gate GaAs MESFET's as Gain Controlled Low-Noise Amplifiers and High-Speed Modulators", IEEE Trans. on Microwave Theory and Techniques, vol. MTT-23, No. 6, Jun. 1975, pp. 461-469.
Nevin et al., "L-Band GaAs FET Amplifier, " Microwave Journal, Apr. 1979, pp. 82, 83, 92.
Van der Ziel et al., "Improvement in the Tetrode FET Noise Figure by Neutralization and Tuning," IEEE J. of Solid-State Circuits, Jun. 1969, pp. 170-172.
Heston David D.
Lehmann Randall E.
Seymour David J.
Heiting Leo N.
Mullins James B.
Robinson Richard K.
Sharp Melvin
Texas Instruments Incorporated
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