Monolithic p-i-n diode limiter

Details Monolithic p-i-n diode limiter Monolithic p-i-n diode limiter

1986-10-30

1991-09-10

Mintel, William

Wave transmission lines and networks

Automatically controlled systems

With control of equalizer and/or delay network

357 74, 357 55, 333 1720, 333247, H01L 2912

Patent

active

050478290

ABSTRACT:
Monolithic gallium arsenide limiters (30) formed of p-i-n diodes (32, 34) that are distributed devices between conductors of coplanar waveguide sections (40, 42, 44) are disclosed. The diode doped regions underlie the coplanar conductors and the diode intrinsic region underlies the coplanar waveguide gap. The grounded coplanar segments connect to a backside ground through vias (74).

REFERENCES:
patent: 2863126 (1958-12-01), Pierce
patent: 3445793 (1969-05-01), Biard
patent: 3538465 (1970-11-01), Manning, Jr. et al.
patent: 3560891 (1971-02-01), MacLeay et al.
patent: 3580886 (1971-02-01), Cooper et al.
patent: 3593207 (1971-07-01), Woermbke
patent: 3715689 (1973-02-01), Laughlin
patent: 3959794 (1976-05-01), Chrepta et al.
patent: 4267538 (1981-05-01), Assal et al.
patent: 4276558 (1981-06-01), Ho et al.
patent: 4571559 (1986-02-01), Henry et al.
Toyoda et al., "GaAs Varactor Diode for VHF TV Tuners", National Technical Report, vol. 22, No. 1, Feb. 1976, pp. 75-80.

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