4. Metal treatment
  5. Barrier layer stock material, p-n type

Paul T. Fini

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Growth of planar, non-polar gallium nitride by hydride vapor...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate

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Growth of planar, non-polar gallium nitride by hydride vapor...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate

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Growth of reduced dislocation density non-polar gallium nitride

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
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Growth of reduced dislocation density non-polar gallium...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
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Technique for the growth of planar semi-polar gallium nitride

Metal treatment – Barrier layer stock material – p-n type
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Profile ID: LFUS-PAI-P-3025200

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