Growth of planar, non-polar gallium nitride by hydride vapor...

Details Growth of planar, non-polar gallium nitride by hydride vapor... Growth of planar, non-polar gallium nitride by hydride vapor...

2003-07-15

2008-09-23

Dinh, Son (Department: 2824)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C117S099000, C257SE29097

Reexamination Certificate

active

07427555

ABSTRACT:
Highly planar non-polar GaN films are grown by hydride vapor phase epitaxy (HVPE). The resulting films are suitable for subsequent device regrowth by a variety of growth techniques.

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