Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2008-09-23
2008-09-23
Dinh, Son (Department: 2824)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C117S099000, C257SE29097
Reexamination Certificate
active
10537385
ABSTRACT:
Highly planar non-polar GaN films are grown by hydride vapor phase epitaxy (HVPE). The resulting films are suitable for subsequent device regrowth by a variety of growth techniques.
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Leszczynski, M., et al., “Lattic
Craven Michael D.
DenBaars Steven P.
Fini Paul T.
Haskell Benjamin A.
Matsuda Shigemasa
Dinh Son
Gates & Cooper LLP
Lulis Michael
The Japan Science and Technology Agency
The Regents of the University of California
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