GaN growth on Si using ZnO buffer layer

Details GaN growth on Si using ZnO buffer layer GaN growth on Si using ZnO buffer layer

2006-02-21

2006-02-21

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S093000, C438S104000

Reexamination Certificate

active

07001791

ABSTRACT:
A method for forming group III-N articles includes the steps of providing a single crystal silicon substrate, depositing a zinc oxide (ZnO) layer on the substrate, and depositing a single crystal group III-N layer on the ZnO layer. At least a portion of the group III-N layer is deposited at a temperature of less than 600° C.

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