4. Semiconductor device manufacturing: process
  5. Coating with electrically or thermally conductive material
  6. To form ohmic contact to semiconductive material

Nobuaki Teraguchi

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Electrode employing nitride-based semiconductor of III-V...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate

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Electrode structure and method for fabricating the same

Chemistry: electrical and wave energy – Apparatus – Electrolytic
Patent

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Electrode structure and method for fabricating the same

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate

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Electrode structure and method for fabricating the same

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent

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Electrode structure for nitride III-V compound semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate

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Profile ID: LFUS-PAI-P-60501

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