Electrode employing nitride-based semiconductor of III-V...

Details Electrode employing nitride-based semiconductor of III-V... Electrode employing nitride-based semiconductor of III-V...

2006-12-05

2006-12-05

Parekh, Nitin (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S734000, C257S744000

Reexamination Certificate

active

07145237

ABSTRACT:
An electrode employing a nitride-based semiconductor of III–V group compound having a favorable ohmic characteristic and a producing method thereof are provided. The electrode includes a nitride-based semiconductor layer of III–V group compound, an electrode metal, and a metal oxide inserted therebetween. The metal oxide is preferably an oxide of metal element(s) permitting formation of a nitride semiconductor.

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Ruvimov, S. et al. (1998). “Microstructure of Ti/Al Ohmic Contacts for n-A1GaN,”Appl. Phys. Lett.73(18):2582-2584.

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