Electrode structure and method for fabricating the same

Details Electrode structure and method for fabricating the same Electrode structure and method for fabricating the same

1995-07-14

1996-11-05

Bell, Bruce F.

Chemistry: electrical and wave energy

Apparatus

Electrolytic

427576, 427578, 427123, 4271261, 427226, 427229, 427255, 4272552, C25B 1100

Patent

active

055713912

ABSTRACT:
The electrode structure of the invention includes an n-type Al.sub.x Ga.sub.y In.sub.1-x-y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) semiconductor layer and an electrode layer formed on the semiconductor layer. In the electrode structure, the electrode layer is made of a metal silicide and, when a metal contained in the metal silicide is nitrified, a free energy of the metal nitride becomes smaller than a free energy of the metal contained in the metal silicide.

REFERENCES:
patent: 4663191 (1987-05-01), Choi et al.
patent: 4708904 (1987-11-01), Shimizu et al.
Amano, H., et al., "P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)" Japanese Journal of Applied Physics (1989) 28(12):L2112-L2114. No month available.
Lin, M. E., et al., "Low resistance ohmic contacts on wide band-gap GaN" Appl. Phys. Lett. (1994)64(8):1003-1005. No month available.

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