Electrode structure and method for fabricating the same

Details Electrode structure and method for fabricating the same Electrode structure and method for fabricating the same

1995-07-19

1997-12-23

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257747, 257744, H01L 2348, H01L 2352, H01L 2940

Patent

active

057010358

ABSTRACT:
The electrode structure of the invention includes a p-type Al.sub.x Ga.sub.y In.sub.1-x-y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) semiconductor layer and an electrode layer formed on the semiconductor layer. In the electrode structure, the electrode layer contains a mixture of a metal nitride and a metal hydride.

REFERENCES:
patent: 5422500 (1995-06-01), Tomokawa et al.
patent: 5432808 (1995-07-01), Hatano et al.
Nakamura et al. , "P-GaN/N-InGaN/N-GaN double-heterostructure blue-light-emiiting diodes" Jpn. J. Appl. Phys. (1993) 32:L8-11.
Lin et al., "Low resistance ohmic contacts on wide band-gap GaN" Appl. Phys. Lett. (1994) 64:1003-1005.

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